The GE DS200IIBDG1A is an Insulated Gate Bipolar Transistor (IGBT) module from GE’s Mark V family. IGBTs are semiconductor devices that combine the best features of bipolar junction transistors (BJTs) and MOSFETs. They are widely used in power electronics applications, including motor drives, power supplies, and renewable energy systems.
Key Features:
- High-Power Capability: Designed to handle high power levels and currents.
- Fast Switching Speed: Enables efficient power conversion and control.
- Low Switching Losses: Reduces power dissipation and improves efficiency.
- Robust Design: Built to withstand harsh industrial environments.
Typical Parameters (may vary depending on specific model):
- Voltage Rating: High voltage ratings (e.g., 1200V, 1700V)
- Current Rating: High current ratings (e.g., 100A, 200A)
- Switching Speed: Fast switching times (e.g., microseconds)
- Thermal Resistance: Low thermal resistance for efficient heat dissipation
- Package Type: Power module package (e.g., PressPak)
Applications:
- Motor drives for industrial machinery
- Power supplies for industrial equipment
- Renewable energy systems (e.g., solar inverters, wind turbines)
- Traction drives for electric vehicles
Note: For the most accurate and up-to-date product information, please refer to the official GE documentation or contact a GE representative.
