MITSUBISHI 81001-450-53-R Product
Product Description
The MITSUBISHI 81001-450-53-R is a high-performance semiconductor module that features a press-pack IGBT (Insulated Gate Bipolar Transistor) and a diode. This module is designed to provide reliable and efficient power conversion solutions for a wide range of industrial applications.
Product Parameters
The MITSUBISHI 81001-450-53-R module has the following parameters:
- Maximum collector-emitter voltage (VCE): 450V
- Maximum collector current (IC): 1000A
- Maximum collector power dissipation (PC): 1800W
- Operating temperature range (Tj): -40°C to 150°C
- Storage temperature range (Tstg): -40°C to 125°C
Product Specifications
The MITSUBISHI 81001-450-53-R module meets the following specifications:
- High power density with low thermal resistance
- Low collector-emitter saturation voltage
- Fast switching
- High reliability and ruggedness
- Built-in temperature sensor for temperature monitoring
- UL recognized and RoHS compliant
Product Applications
The MITSUBISHI 81001-450-53-R module is suitable for a wide range of applications, including:
- Industrial motor drives
- Power supplies
- Welding equipment
- UPS systems
- Inverters
- DC-DC converters
With its high performance and reliability, the MITSUBISHI 81001-450-53-R module is an excellent choice for demanding industrial applications that require efficient and robust power conversion solutions.