LAM 810-102361-222 source module

  • Semiconductor etching
  • Thin film deposition
  • Surface modification

The LAM 810-102361-222 is a high-performance ion source module that is suitable for a wide range of semiconductor manufacturing applications.

Please note that this is a general description of the product, and the specific parameters and specifications may vary depending on the specific model.

Category:

Description

Product Name: LAM 810-102361-222 Ion Source Module

Product Description: The LAM 810-102361-222 is an ion source module for LAM semiconductor etching equipment. It is used to generate ions that are used to etch semiconductor wafers.

Product Parameters:

  • Ion type: Argon (Ar)
  • Ion energy: 200 to 1000 eV
  • Ion current: 0 to 100 mA
  • Operating temperature: 0°C to 50°C
  • Storage temperature: -20°C to 60°C
  • Humidity: 5% to 95% non-condensing
  • Vibration: 5 Hz to 150 Hz, 1 mm amplitude
  • Shock: 15 g, 11 ms half sine

Specifications:

  • Module dimensions: 300 mm x 200 mm x 100 mm
  • Weight: 5 kg

Example applications:

  • Semiconductor etching
  • Thin film deposition
  • Surface modification

The LAM 810-102361-222 is a high-performance ion source module that is suitable for a wide range of semiconductor manufacturing applications.

Please note that this is a general description of the product, and the specific parameters and specifications may vary depending on the specific model.